N’chifukwa chiyani tiyenera kugwiritsa ntchito Ge ngati chowunikira zithunzi?

N’chifukwa chiyani tiyenera kugwiritsa ntchito Ge ngatichowunikira zithunzi
1, Malo Oyambira: Chifukwa chiyani ndikofunikira kugwiritsa ntchito Ge ngati chowunikira zithunzi
Mu maulalo a silicon optical, photodetector ndi "omasulira" omwe amasintha ma optical signals kukhala ma electric signals. Komabe, silicon yokha ili ndi bandgap ya 1.12 eV ndipo imaonekera bwino kwambiri ku ma communication band bands a 1310/1550 nm, kotero germanium (Ge) yokha ndi yomwe ingalowetsedwe.
Ge ili ndi bandgap yolunjika ya 0.8 eV, yomwe imaphimba band ya O/C yolumikizirana, koma ili ndi 4.2% lattice mismatch ndi silicon. Kuchuluka kwa dislocation kwa kukula mwachindunji kuli pamwamba pa 4 × 10 ⁸ cm ⁻ ², ndipo mdima wamagetsi sukupezeka konse; Nthawi yomweyo, Ge ili ndi bandgap yolunjika, ndipo coefficient yake yoyamwa ndi yotsika kwambiri kuposa InGaAs, yomwe ndi kufooka kwachilengedwe.
2, Kupambana kwapakati: kuphatikiza kwa ma waveguide kumaphwanya vuto la magwiridwe antchito
"Njira yopezera mayamwidwe a ma frequency = njira yosonkhanitsira ma frequency" ya zida zodziwira ma frequency zomwe zimayima nthawi yayitali zimakhala ndi "bandwidth yoyankha", yokhala ndi malire apamwamba a 7GHz okha;
Pakadali pano, njira zazikulu zogwiritsira ntchito zida zimagawidwa m'magulu atatu:
Pin yoyimirira: Njirayi ndi yosavuta komanso yodziwika bwino mumakampani, ikukwaniritsa 40Gb/s @ zero bias ndi>60GHz bandwidth;
Chitsulo cha MSM Metal Semiconductor: Palibe chifukwa chogwiritsa ntchito mankhwala ochepetsa kutentha kwambiri, chitha kuphatikizidwa kumbuyo, chili ndi mphamvu yakuda kwambiri, komanso bandwidth yoposa 40GHz;
Mitundu yapamwamba kwambiri:Zowunikira mafunde oyendayenda(TWPD) ndi ma single line carrier photodetectors (UTC) amagwiritsidwa ntchito polumikiza ma microwave photon links, poyesa bandwidth yapamwamba komanso high saturation photocurrent.
3, Zipangizo ndi Luso: Kusintha 'Zolakwika' kukhala Ubwino
Poyankha kusagwirizana kwa lattice ndi zofooka za magwiridwe antchito, makampaniwa apanga njira zokhwima:
Njira ziwiri za epitaxy: choyamba, gawo lotsika la buffer la 30-50nm limakulitsidwa, kenako kutentha kumawonjezeka kuti lifike pa makulidwe omwe mukufuna, kuchepetsa kuchuluka kwa dislocation kufika pa ~10 ⁷ cm ⁻²;
Uinjiniya wa kupsinjika: Kusiyana kwa ma coefficients okulitsa kutentha pakati pa Ge ndi Si kudzayambitsa kupsinjika kwa 0.2% biaxial tensile mu filimu ya Ge, zomwe zimapangitsa kuti pakhale kuchepa kwa band gap mwachindunji kuchokera pa 0.8 eV mpaka 0.77 eV ndi kukulitsa m'mphepete mwa kuyamwa kuchokera pa 1.55 μ m mpaka 1.61 μ m, zomwe zimaphimba gulu lonse la C+L, ndipo ngakhale coefficient yoyamwa mu L band ikhoza kufanana ndi ya InGaAs;
Kuphatikizika kwa CMOS: Kudakali mu gawo lofufuza. Kuphatikizika kwa kutsogolo (FEOL) kuyenera kupirira kutentha kwambiri kuposa 750 ℃, pomwe kuphatikizika kwa kumbuyo (BEOL) ndi kotetezeka kutentha koma kopanda ma kristalo, ndipo sikunapange yankho lokhwima logwirizana. Pakadali pano, makampani nthawi zambiri amagwiritsa ntchito njira yosakanikirana ya "90% single-chip + external".laser“.