Kapangidwe ka InGaAs Photodetector

Kapangidwe kaChowunikira zithunzi cha InGaAs
Kuyambira m'ma 1980, ofufuza akhala akuphunzira kapangidwe ka ma photodetector a InGaAs, omwe angafupikitsidwe m'mitundu itatu ikuluikulu: InGaAs metal semiconductor metal metalma photodetectors(MSM-PD), InGaAsZipangizo zowunikira zithunzi za PIN(PIN-PD), ndi InGaAszida zowonera zithunzi za chipale chofewa(APD-PD). Pali kusiyana kwakukulu pakupanga ndi mtengo wa ma InGaAs photodetectors okhala ndi mapangidwe osiyanasiyana, komanso pali kusiyana kwakukulu pakugwira ntchito kwa chipangizocho.
Chithunzi cha kapangidwe ka InGaAs metal semiconductor metal photodetector chikuwonetsedwa pachithunzichi, chomwe ndi kapangidwe kapadera kozikidwa pa Schottky junction. Mu 1992, Shi ndi anzake adagwiritsa ntchito ukadaulo wa low-pressure metal organic vapor phase epitaxy (LP-MOVPE) kuti akule zigawo za epitaxial ndikukonzekeretsa ma photodetector a InGaAs MSM. Chipangizochi chili ndi mphamvu yayikulu ya 0.42 A/W pa kutalika kwa 1.3 μ m ndi mphamvu yakuda yosakwana 5.6 pA/μ m² pa 1.5 V. Mu 1996, ofufuza adagwiritsa ntchito gas-phase molecular beam epitaxy (GSMBE) kuti akule zigawo za InAlAs InGaAs InP epitaxial, zomwe zidawonetsa mphamvu yayikulu yotsutsa. Kukula kwa zinthu kunakonzedwa bwino kudzera muyeso wa X-ray diffraction, zomwe zidapangitsa kuti pakhale kusalingana pakati pa zigawo za InGaAs ndi InAlAs mkati mwa 1 × 10 ⁻ ³. Zotsatira zake, magwiridwe antchito a chipangizocho adakonzedwa bwino, ndi mphamvu yakuda yosakwana 0.75 pA/μ m² pa 10 V ndi yankho lachangu la 16 ps pa 5 V. Ponseponse, chowunikira kapangidwe ka MSM chili ndi kapangidwe kosavuta komanso kosavuta kuphatikiza, komwe kamasonyeza mphamvu yakuda yochepa (pA level), koma electrode yachitsulo imachepetsa malo ogwiritsira ntchito kuwala kwa chipangizocho, zomwe zimapangitsa kuti chisamayankhe bwino poyerekeza ndi zinthu zina.

Chojambulira zithunzi cha InGaAs PIN chili ndi gawo lobisika pakati pa gawo lolumikizirana la P-type ndi gawo lolumikizirana la N-type, monga momwe zasonyezedwera pachithunzichi, zomwe zimawonjezera m'lifupi mwa dera lotha ntchito, motero zimayatsa ma elekitironi ambiri ndikupanga photocurrent yayikulu, motero zikuwonetsa kuyendetsa bwino kwamagetsi. Mu 2007, ofufuza adagwiritsa ntchito MBE kukulitsa zigawo zotentha kwambiri, kukonza kukhwima kwa pamwamba ndikuthana ndi kusalingana kwa lattice pakati pa Si ndi InP. Adaphatikiza kapangidwe ka InGaAs PIN pa substrates za InP pogwiritsa ntchito MOCVD, ndipo kuyankha kwa chipangizocho kunali pafupifupi 0.57 A/W. Mu 2011, ofufuza adagwiritsa ntchito zojambulira zithunzi za PIN kuti apange chipangizo chojambulira zithunzi cha LiDAR chaufupi kuti chizitha kuyenda, kupewa zopinga/kugundana, komanso kuzindikira/kuzindikira magalimoto ang'onoang'ono osayendetsedwa ndi anthu. Chipangizochi chidalumikizidwa ndi chip chotsitsa cha microwave amplifier, chomwe chimawongolera kwambiri chiŵerengero cha chizindikiro-kwa-phokoso cha zojambulira zithunzi za InGaAs PIN. Pachifukwa ichi, mu 2012, ofufuza adagwiritsa ntchito chipangizochi chojambulira cha LiDAR pa maloboti, omwe anali ndi malo opitilira mamita 50 ndipo resolution idakwera kufika pa 256 × 128.
InGaAs avalanche photodetector ndi mtundu wa photodetector yokhala ndi gain, monga momwe zasonyezedwera pachithunzi cha kapangidwe kake. Ma electron hole pair amapeza mphamvu yokwanira pansi pa mphamvu ya magetsi mkati mwa dera lowirikiza kawiri, ndipo amagundana ndi maatomu kuti apange ma electron hole pair atsopano, kupanga avalanche effect ndikuwirikiza kawiri zonyamulira zosagwirizana ndi equilibrium charge muzinthuzo. Mu 2013, ofufuza adagwiritsa ntchito MBE kuti apange ma lattice ofanana ndi InGaAs ndi InAlAs alloys pa InP substrates, kusintha mphamvu ya carrier kudzera mu kusintha kwa kapangidwe ka alloy, makulidwe a epitaxial layer, ndi doping, kukulitsa electroshock ionization pomwe kuchepetsa hole ionization. Pansi pa equivalent output signal gain, APD imawonetsa phokoso lotsika komanso kuchepa kwa dark current. Mu 2016, ofufuza adapanga nsanja yoyesera ya 1570 nm laser active imaging kutengera InGaAs avalanche photodetectors. Dongosolo lamkati laChowunikira zithunzi cha APDMa echo olandiridwa ndi kutulutsa zizindikiro za digito mwachindunji, zomwe zimapangitsa chipangizo chonse kukhala chopapatiza. Zotsatira za kuyesazi zikuwonetsedwa mu Zithunzi (d) ndi (e). Chithunzi (d) ndi chithunzi chenicheni cha cholinga chojambula, ndipo Chithunzi (e) ndi chithunzi cha mtunda wa magawo atatu. Zitha kuwoneka bwino kuti dera la zenera mu Zone C lili ndi mtunda wozama kuchokera ku Zigawo A ndi B. Pulatifomu iyi imapeza m'lifupi mwa pulse yochepera 10 ns, mphamvu yosinthika ya pulse imodzi (1-3) mJ, ngodya yowonera ya 2 ° ya ma lens otumizira ndi kulandira, liwiro lobwerezabwereza la 1 kHz, ndi kuzungulira kwa detector pafupifupi 60%. Chifukwa cha kuchuluka kwa photocurrent mkati, kuyankha mwachangu, kukula kocheperako, kulimba, komanso mtengo wotsika wa APD, ma photodetector a APD amatha kupeza liwiro lozindikira lomwe ndi lalikulu kwambiri kuposa ma PIN photodetectors. Chifukwa chake, pakadali pano radar yayikulu ya laser imagwiritsa ntchito ma avalanche photodetectors.