Thin film lithium niobate (LN) photodetector

Thin film lithium niobate (LN) photodetector

Lithium niobate (LN) ili ndi mawonekedwe apadera a kristalo ndi zotulukapo zolemera zakuthupi, monga zotsatira zopanda mzere, zotsatira za electro-optic, zotsatira za pyroelectric, ndi zotsatira za piezoelectric. Panthawi imodzimodziyo, ili ndi ubwino wawindo la wideband Optical transparency ndi kukhazikika kwa nthawi yaitali. Makhalidwewa amachititsa LN kukhala nsanja yofunikira kwa mbadwo watsopano wa ma photonics ophatikizika. Pazida zowonera ndi makina a optoelectronic, mawonekedwe a LN amatha kupereka ntchito zambiri komanso magwiridwe antchito, kulimbikitsa chitukuko cha kulumikizana kwa kuwala, ma computing optical, ndi magawo owonera. Komabe, chifukwa cha kufooka kofooka ndi kutsekemera kwa lithiamu niobate, kuphatikizika kwa lithiamu niobate kumakumanabe ndi vuto la kuzindikira kovuta. M'zaka zaposachedwa, malipoti m'gawoli makamaka amaphatikiza ma waveguide Integrated Photodetectors ndi heterojunction photodetectors.
The waveguide Integrated photodetector yochokera ku lithiamu niobate nthawi zambiri imayang'ana pa optical communication C-band (1525-1565nm). Pankhani ya ntchito, LN makamaka imagwira ntchito ya mafunde owongolera, pomwe ntchito yozindikira optoelectronic imadalira kwambiri ma semiconductors monga silicon, gulu la III-V laling'ono la bandgap semiconductors, ndi zida ziwiri-dimensional. Muzomangamanga zotere, kuwala kumafalikira kudzera mu lithiamu niobate optical waveguides ndi kutayika kochepa, ndiyeno kutengeka ndi zipangizo zina za semiconductor zochokera ku photoelectric zotsatira (monga photoconductivity kapena photovoltaic effects) kuonjezera ndende yonyamulira ndikuyisintha kukhala zizindikiro zamagetsi kuti zituluke. Ubwino wake ndi bandwidth yayikulu yogwiritsira ntchito (~GHz), magetsi otsika ogwiritsira ntchito, kukula kochepa, komanso kugwirizana ndi kuphatikiza kwa Photonic chip. Komabe, chifukwa cha kulekana kwa malo a lithiamu niobate ndi zida zopangira semiconductor, ngakhale aliyense amachita ntchito zake, LN imangogwira ntchito yowongolera mafunde ndi zinthu zina zabwino zakunja sizinagwiritsidwe ntchito bwino. Zipangizo za semiconductor zimangothandiza pakusintha kwazithunzi komanso kusowa kolumikizana kophatikizana, zomwe zimapangitsa kuti gulu lizikhala locheperako. Pankhani ya kukhazikitsidwa kwachindunji, kugwirizanitsa kwa kuwala kuchokera ku gwero la kuwala kupita ku lithiamu niobate optical waveguide kumabweretsa kutayika kwakukulu ndi zofunikira zowonongeka. Kuonjezera apo, mphamvu yeniyeni ya kuwala ya kuwala yomwe imawunikiridwa pa njira ya chipangizo cha semiconductor m'chigawo chogwirizanitsa ndizovuta kuwerengera, zomwe zimalepheretsa kuzindikira kwake.
Zachikhalidwema photodetectorsZomwe zimagwiritsidwa ntchito pojambula zithunzi nthawi zambiri zimatengera zida za semiconductor. Chifukwa chake, chifukwa cha lithiamu niobate, kuchuluka kwake kocheperako komanso kutentha kwake kumapangitsa kuti mosakayikira sikuyanjidwa ndi ofufuza a photodetector, komanso ngakhale mfundo yovuta m'munda. Komabe, kukula kwaukadaulo wa heterojunction m'zaka zaposachedwa kwabweretsa chiyembekezo pakufufuza kwa lithiamu niobate based photodetectors. Zida zina zokhala ndi kuyamwa kwakukulu kowala kapena kuwongolera bwino kwambiri zitha kuphatikizidwa mosiyanasiyana ndi lithiamu niobate kuti zithandizire zophophonya zake. Pa nthawi yomweyo, mowiriza polarization anachititsa pyroelectric makhalidwe a lithiamu niobate chifukwa structural anisotropy akhoza kuwongoleredwa ndi kutembenukira kwa kutentha pansi kuwala walitsa, potero kusintha pyroelectric makhalidwe kwa optoelectronic kuzindikira. Kutentha kumeneku kumakhala ndi ubwino wa wideband ndi kudziyendetsa nokha, ndipo kumatha kuwonjezeredwa ndikuphatikizidwa ndi zipangizo zina. Kugwiritsiridwa ntchito kofananira kwa matenthedwe ndi ma photoelectric kwatsegula nthawi yatsopano ya lithiamu niobate based photodetectors, zomwe zimathandizira zida kuphatikiza zabwino zonse ziwiri. Ndipo kukonza zolakwikazo ndikupeza kuphatikiza kophatikizana kwaubwino, Ndi malo opangira kafukufuku m'zaka zaposachedwa. Kuphatikiza apo, kugwiritsidwa ntchito kwa ion implantation, uinjiniya wa band, ndi uinjiniya wopumira ndi chisankho chabwino chothana ndi vuto lozindikira lithiamu niobate. Komabe, chifukwa cha zovuta zogwiritsira ntchito lithiamu niobate, mundawu ukukumanabe ndi zovuta zazikulu monga kusakanikirana kochepa, zipangizo zamakono zojambula ndi machitidwe, ndi ntchito yosakwanira, yomwe ili ndi phindu lalikulu la kafukufuku ndi malo.

Chithunzi 1, pogwiritsa ntchito mphamvu zowonongeka mkati mwa LN bandgap monga malo operekera ma elekitironi, zonyamulira zaulere zimapangidwira mu bandi yoyendetsera pansi pa chisangalalo chowonekera. Poyerekeza ndi ma photodetectors a pyroelectric LN am'mbuyomu, omwe nthawi zambiri anali ochepa pa liwiro la kuyankha la pafupifupi 100Hz, izi.Chithunzi cha LNili ndi liwiro loyankha mwachangu mpaka 10kHz. Pakadali pano, mu ntchitoyi, zidawonetsedwa kuti magnesium ion doped LN imatha kukwaniritsa kusintha kwa kuwala kwakunja ndikuyankha mpaka 10kHz. Ntchitoyi imalimbikitsa kafukufuku wochita bwino kwambiri komansoma photodetectors othamanga kwambiri a LNpomanga tchipisi tating'onoting'ono tophatikizana ndi LN Photonic chips.
Mwachidule, gawo lofufuzira lafilimu woonda wa lithiamu niobate photodetectorsili ndi zofunikira zasayansi komanso kuthekera kwakukulu kogwiritsa ntchito. M'tsogolomu, ndi chitukuko chaukadaulo komanso kuzama kwa kafukufuku, filimu yopyapyala ya lithium niobate (LN) idzakhala yolumikizana kwambiri. Kaphatikizidwe njira zosiyanasiyana kaphatikizidwe kukwaniritsa mkulu-ntchito, kuyankha mofulumira, ndi wideband woonda filimu lifiyamu niobate photodetectors m'mbali zonse adzakhala weniweni, amene kwambiri kulimbikitsa chitukuko cha pa-Chip kusakanikirana ndi minda wanzeru kuzindikira, ndi kupereka mwayi kwambiri kwa m'badwo watsopano wa ntchito photonics.