Kupititsa patsogolo Kafukufuku wa InGaAs photodetector

Kupititsa patsogolo kafukufuku waInGaAs Photodetector

Ndi kukula kokulirapo kwa voliyumu yotumizira deta, ukadaulo wolumikizirana ndi kuwala walowa m'malo mwaukadaulo wolumikizana ndi magetsi ndipo wakhala ukadaulo wodziwika bwino pakupatsirana kwapakatikati komanso kwakutali kotaya kwambiri. Monga chigawo chachikulu cha optical kulandira mapeto, ndiPhotodetectorili ndi zofunikira zapamwamba kwambiri pakuchita kwake kothamanga kwambiri. Pakati pawo, ma waveguide ophatikizana ndi photodetector ndi yaying'ono, yokwera mu bandwidth, komanso yosavuta kuphatikizira pa-chip ndi zida zina za optoelectronic, zomwe ndizomwe zimawunikira pakufufuza mwachangu kwambiri. ndipo ndi ma photodetectors oimira kwambiri mu gulu lapafupi la infrared communication band.

InGaAs ndi imodzi mwazinthu zabwino kwambiri zopezera liwiro komanso kuthamanga kwambirima photodetectors apamwamba kwambiri. Choyamba, InGaAs ndi chinthu cholunjika cha bandgap semiconductor, ndipo kutalika kwake kwa bandgap kumatha kuyendetsedwa ndi chiŵerengero chapakati pa In ndi Ga, zomwe zimathandiza kuzindikira zizindikiro za kuwala kwa mafunde osiyanasiyana. Pakati pawo, In0.53Ga0.47As imagwirizana bwino ndi lattice ya InP substrate ndipo ili ndi mphamvu yoyamwitsa kwambiri yowunikira mu gulu la optical communication. Ndilo lomwe limagwiritsidwa ntchito kwambiri popanga photodetector komanso lili ndi mawonekedwe akuda kwambiri komanso magwiridwe antchito. Kachiwiri, zida zonse za InGaAs ndi InP zimakhala ndi ma electron drift velocities, ndi ma electron drift velocities odzaza ndi 1 × 107cm/s. Pakalipano, pansi pa magetsi enieni, InGaAs ndi InP zipangizo zimasonyeza zotsatira za electron velocity overshoot, ndi maulendo awo opitirira 4 × 107cm / s ndi 6 × 107cm / s motsatira. Ndikoyenera kukwaniritsa bandwidth yowoloka kwambiri. Pakalipano, ma InGaAs photodetectors ndi omwe amadziwika kwambiri ndi ma photodetectors okhudzana ndi kuwala. Zowunikira zazing'onoting'ono, zobwerera m'mbuyo, komanso zowunikira zapamwamba za bandwidth zapangidwanso, makamaka zomwe zimagwiritsidwa ntchito ngati kuthamanga kwambiri komanso kukhudzika kwakukulu.

Komabe, chifukwa cha kuchepa kwa njira zawo zolumikizirana, zowunikira zomwe zimachitika pamtunda zimakhala zovuta kuziphatikiza ndi zida zina za optoelectronic. Chifukwa chake, pakuwonjezeka kwa kufunikira kwa kuphatikiza kwa optoelectronic, ma waveguide ophatikiza ma InGaAs ma photodetectors omwe amagwira ntchito bwino kwambiri komanso oyenera kuphatikiza pang'onopang'ono akhala gawo lofufuza. Pakati pawo, malonda a InGaAs photodetector modules a 70GHz ndi 110GHz pafupifupi onse amatengera ma waveguide coupling. Malinga ndi kusiyana kwa zida zapansi panthaka, ma waveguide ophatikizidwa ndi InGaAs photodetectors amatha kugawidwa m'mitundu iwiri: INP-based and Si-based. Epitaxial zakuthupi pa InP substrates zili ndi khalidwe lapamwamba ndipo ndizoyenera kupanga zipangizo zamakono. Komabe, kwa zida za gulu la III-V zomwe zidakula kapena zomangika pazigawo za Si, chifukwa cha kusagwirizana kosiyanasiyana pakati pa zida za InGaAs ndi magawo a Si, mawonekedwe ake kapena mawonekedwe ake ndi osauka, ndipo pakadalipo mwayi woti ziwongolere magwiridwe antchito a zida.

Chipangizochi chimagwiritsa ntchito InGaAsP m'malo mwa InP ngati gawo lazochepa. Ngakhale imachepetsa kuthamanga kwa ma elekitironi kuchulukirachulukira pang'onopang'ono, imathandizira kulumikizana kwa kuwala kwa zochitika kuchokera ku waveguide kupita kudera loyamwa. Panthawi imodzimodziyo, gulu la InGaAsP N-mtundu wa kukhudzana limachotsedwa, ndipo kagawo kakang'ono kamene kamapangidwira mbali zonse za P-mtundu wa P, kupititsa patsogolo kukakamiza pamunda wowala. Zimathandizira kuti chipangizocho chikwaniritse kuyankha kwakukulu.