Kapangidwe ka InGaAs photodetector

Kapangidwe kaInGaAs Photodetector

Kuyambira m'ma 1980, ofufuza kunyumba ndi kunja adaphunzira momwe InGaAs photodetectors, yomwe imagawidwa kwambiri m'magulu atatu. Ndi InGaAs metal-Semiconductor-metal photodetector (MSM-PD), InGaAs PIN Photodetector (PIN-PD), ndi InGaAs Avalanche Photodetector (APD-PD). Pali kusiyana kwakukulu pakupanga ndi mtengo wa InGaAs photodetectors ndi mapangidwe osiyanasiyana, komanso pali kusiyana kwakukulu pakugwira ntchito kwa chipangizo.

The InGaAs zitsulo-semiconductor-zitsuloPhotodetector, yosonyezedwa mu Chithunzi (a), ndi dongosolo lapadera lochokera pamagulu a Schottky. Mu 1992, Shi et al. adagwiritsa ntchito ukadaulo wocheperako wachitsulo-organic vapor phase epitaxy technology (LP-MOVPE) kukulitsa zigawo za epitaxy ndikukonzekeretsa InGaAs MSM photodetector, yomwe imakhala ndi kuyankha kwakukulu kwa 0.42 A/W pamtunda wa 1.3 μm ndi mdima wapano wochepera 5.6 pA/ μm² pa 1.5 V. Mu 1996, zhang et al. adagwiritsa ntchito gas phase molecular beam epitaxy (GSMBE) kukulitsa InAlAs-InGaAs-InP epitaxy layer. Chigawo cha InAlAs chinasonyeza makhalidwe apamwamba a resistivity, ndipo kukula kwake kunakongoletsedwa ndi X-ray diffraction muyeso, kotero kuti kusagwirizana kwa lattice pakati pa InGaAs ndi InAlAs zigawo kunali mkati mwa 1 × 10⁻³. Izi zimabweretsa kukhathamiritsa kwa chipangizocho ndi mdima wakuda pansi pa 0.75 pA/μm² pa 10 V ndi kuyankha kwakanthawi kochepa mpaka 16 ps pa 5 V. Pazonse, chowunikira chojambula cha MSM ndi chosavuta komanso chosavuta kuphatikiza, chowonetsa mdima wocheperako (pA). dongosolo), koma elekitirodi zitsulo kuchepetsa bwino mayamwidwe kuwala dera chipangizo, kotero kuyankha ndi otsika kuposa nyumba zina.

InGaAs PIN photodetector imayika chigawo chapakati pakati pa P-type contact layer ndi N-type contact layer, monga momwe tawonetsera pa Chithunzi (b), chomwe chimawonjezera m'lifupi mwa chigawo chochepa, motero chimawotcha mawiri awiri a electron-hole ndikupanga photocurrent yokulirapo, chifukwa chake ili ndi magwiridwe antchito abwino kwambiri a ma elekitironi. Mu 2007, A.Poloczek et al. adagwiritsa ntchito MBE kukulitsa chotchinga chotsika kutentha kuti chiwongolere kuuma kwapamtunda ndikugonjetsa kusagwirizana kwa latisi pakati pa Si ndi InP. MOCVD idagwiritsidwa ntchito kuphatikiza kapangidwe ka InGaAs PIN pa gawo lapansi la InP, ndipo kuyankha kwa chipangizocho kunali pafupifupi 0.57A / W. Mu 2011, Army Research Laboratory (ALR) idagwiritsa ntchito ma PIN photodetectors kuti aphunzire chithunzi cha liDAR pakuyenda, zopinga / kupewa kugundana, komanso kuzindikira chandamale / kuzindikira chandamale pamagalimoto ang'onoang'ono osayendetsedwa, ophatikizidwa ndi chipangizo chotsika mtengo cha microwave amplifier kunasintha kwambiri chiŵerengero cha ma sign-to-noise cha InGaAs PIN photodetector. Pazifukwa izi, mu 2012, ALR idagwiritsa ntchito chithunzithunzi cha liDAR cha maloboti, okhala ndi mawonekedwe opitilira 50 m komanso 256 × 128.

InGaAsPhotodetector ya avalanchendi mtundu wa photodetector ndi phindu, kapangidwe kake kakuwonetsedwa mu Chithunzi (c). Ma electron-hole awiri amapeza mphamvu zokwanira pansi pa mphamvu ya magetsi mkati mwa dera lowirikiza kawiri, kuti agwirizane ndi atomu, apange awiriawiri a electron-hole, kupanga chiwonongeko, ndi kuchulukitsa zonyamulira zosafanana muzinthuzo. . Mu 2013, George M adagwiritsa ntchito MBE kukulitsa lattice yofanana ndi InGaAs ndi InAlAs alloys pa InP substrate, pogwiritsa ntchito kusintha kwa aloyi, makulidwe a epitaxial layer, ndi doping to modulated carrier energy kuti achulukitse ionization ya electroshock ndikuchepetsa kuyanika kwa dzenje. Pakupindula kofanana kwa siginecha, APD ikuwonetsa phokoso lotsika komanso kutsika kwamdima wakuda. Mu 2016, Sun Jianfeng et al. adamanga nsanja ya 1570 nm laser active imaging imaging potengera InGaAs avalanche photodetector. Dera lamkati laAPD Photodetectoradalandira ma echo ndikutulutsa mwachindunji ma siginecha a digito, kupangitsa chipangizo chonsecho kukhala chophatikizika. Zotsatira zoyesera zikuwonetsedwa mu FIG. (d) ndi (e). Chithunzi (d) ndi chithunzi chakuthupi cha chandamale chojambula, ndipo Chithunzi (e) ndi chithunzi chamtunda wa mbali zitatu. Zitha kuwoneka bwino kuti gawo lazenera la dera c lili ndi mtunda wakuya ndi dera A ndi b. Pulatifomu imazindikira kugunda kwapakati pa 10 ns, mphamvu imodzi yamagetsi (1 ~ 3) mJ yosinthika, kulandira lens field Angle ya 2 °, kubwereza pafupipafupi kwa 1 kHz, chiŵerengero cha ntchito ya detector pafupifupi 60%. Chifukwa cha kupindula kwamkati kwa chithunzi cha APD, kuyankha mwachangu, kukula kwapang'onopang'ono, kulimba komanso kutsika mtengo, zowunikira za APD zitha kukhala zotsogola kwambiri pakuzindikira kuposa ma PIN photodetectors, kotero kuti liDAR yodziwika bwino imayang'aniridwa kwambiri ndi ma avalanche photodetectors.

Ponseponse, ndi chitukuko chofulumira cha ukadaulo wokonzekera wa InGaAs kunyumba ndi kunja, titha kugwiritsa ntchito mwaluso MBE, MOCVD, LPE ndi matekinoloje ena kuti tikonzekerere gawo lalikulu la InGaAs epitaxial layer pa InP substrate. Ma InGaAs photodetectors amawonetsa kutsika kwamdima wakuda komanso kuyankha kwakukulu, mdima wotsika kwambiri ndi wotsika kuposa 0.75 pA/μm², kuyankha kwakukulu kumafika ku 0.57 A/W, ndipo kuyankha kwakanthawi kochepa (ps order). Kukula kwamtsogolo kwa InGaAs photodetectors kudzayang'ana mbali ziwiri izi: (1) InGaAs epitaxial layer imakula mwachindunji pa gawo la Si. Pakadali pano, zida zambiri zama microelectronic pamsika ndizokhazikitsidwa ndi Si, ndipo chitukuko chophatikizika chotsatira cha InGaAs ndi Si ndizomwe zimachitika. Kuthetsa mavuto monga kusagwirizana kwa lattice ndi kusiyana kwa kuchuluka kwa kutentha kwapakati ndikofunikira pakuphunzira kwa InGaAs/Si; (2) Ukadaulo wa 1550 nm wavelength wakhwima, ndipo kutalika kwa mafunde (2.0 ~ 2.5) μm ndiye njira yamtsogolo yofufuzira. Ndi kuwonjezeka kwa Mu zigawo, kusagwirizana kwa lattice pakati pa InP substrate ndi InGaAs epitaxial wosanjikiza kungayambitse kusokonezeka kwakukulu ndi zolakwika, choncho m'pofunika kukhathamiritsa ndondomeko ya chipangizo, kuchepetsa kuwonongeka kwa lattice, ndi kuchepetsa chipangizo chakuda chakuda.