Ma photodetectors othamanga kwambiri amayambitsidwa ndiZithunzi za InGaAs
Ma photodetectors othamanga kwambirim'munda wa kulumikizana kwa kuwala makamaka kumaphatikizapo ma photodetectors a III-V InGaAs ndi IV full Si ndi Ge/Ndi ma photodetectors. Yoyamba ndi yachikhalidwe pafupi ndi infrared detector, yomwe yakhala ikulamulira kwa nthawi yaitali, pamene yotsirizirayi imadalira teknoloji ya silicon optical kuti ikhale nyenyezi yomwe ikukwera, ndipo ndi malo otentha kwambiri pa kafukufuku wapadziko lonse wa optoelectronics m'zaka zaposachedwa. Kuphatikiza apo, zowunikira zatsopano zochokera ku perovskite, organic and two-dimensional materials zikukula mofulumira chifukwa cha ubwino wa kukonza kosavuta, kusinthasintha kwabwino komanso kusinthika. Pali kusiyana kwakukulu pakati pa zowunikira zatsopanozi ndi zowonera zachikhalidwe zamtundu wazinthu ndi njira zopangira. Zowunikira za Perovskite zili ndi mawonekedwe abwino kwambiri a kuyamwa kwa kuwala komanso mphamvu yoyendetsera bwino, zowunikira zida zamagetsi zimagwiritsidwa ntchito kwambiri chifukwa cha ma elekitironi otsika mtengo komanso osinthika, komanso zowunikira zamitundu iwiri zakopa chidwi kwambiri chifukwa cha mawonekedwe awo apadera komanso kuyenda kwambiri. Komabe, poyerekeza ndi zowunikira za InGaAs ndi Si/Ge, zowunikira zatsopanozi zikufunikabe kuwongolera potengera kukhazikika kwanthawi yayitali, kukhwima kwa kupanga ndi kuphatikiza.
InGaAs ndi imodzi mwazinthu zabwino kwambiri zozindikiritsira kuthamanga kwambiri komanso ma photodetectors apamwamba kwambiri. Choyamba, InGaAs ndi chinthu cholunjika cha bandgap semiconductor, ndipo m'lifupi mwake bandgap imatha kuyendetsedwa ndi chiŵerengero chapakati pa In ndi Ga kuti tipeze zizindikiro za kuwala kwa mafunde osiyanasiyana. Pakati pawo, In0.53Ga0.47A imagwirizana bwino ndi gawo laling'ono la InP, ndipo ili ndi coefficient yayikulu yoyamwa kuwala mu gulu la optical communication, lomwe limagwiritsidwa ntchito kwambiri pokonzekera.ma photodetectors, ndi mdima wamakono ndi machitidwe oyankha nawonso ndi abwino kwambiri. Kachiwiri, zida za InGaAs ndi InP zonse zimakhala ndi liwiro la electron drift, ndipo kuthamanga kwawo kwa electron kuli pafupifupi 1 × 107 cm/s. Nthawi yomweyo, zida za InGaAs ndi InP zimakhala ndi ma electron velocity overshoot effect pansi pa malo enieni amagetsi. Liwiro la overshoot likhoza kugawidwa mu 4 × 107cm / s ndi 6 × 107cm / s, zomwe zimathandiza kuti muzindikire chonyamulira chachikulu chokhala ndi nthawi yochepa. Pakalipano, InGaAs photodetector ndiyo yodziwika kwambiri yojambula zithunzi yolumikizirana ndi kuwala, ndipo njira yolumikizira zochitika zapamtunda imagwiritsidwa ntchito kwambiri pamsika, ndipo 25 Gbaud / s ndi 56 Gbaud / s zowunikira zowonongeka zachitika. Kukula kwakung'ono, zochitika zam'mbuyo ndi zowunikira zazikulu za bandwidth padziko lapansi zapangidwanso, zomwe zimakhala zoyenera kwambiri kuthamanga kwambiri komanso kugwiritsa ntchito machulukidwe apamwamba. Komabe, kafukufuku wapamtunda amachepa ndi njira yake yolumikizirana ndipo ndizovuta kuphatikiza ndi zida zina za optoelectronic. Chifukwa chake, pakuwongolera kwa zofunikira zophatikizira optoelectronic, ma waveguide ophatikiza ma InGaAs photodetectors omwe amagwira ntchito bwino kwambiri komanso oyenera kuphatikizidwa pang'onopang'ono akhala gawo lalikulu la kafukufuku, pomwe ma 70 GHz ndi 110 GHz InGaAs photoprobe modules pafupifupi onse amagwiritsa ntchito mawonekedwe ophatikizika a waveguide. Malinga ndi zida zosiyanasiyana zagawo, mawonekedwe olumikizira zithunzi a InGaAs amatha kugawidwa m'magulu awiri: InP ndi Si. Zinthu za epitaxial pa InP substrate zili ndipamwamba kwambiri ndipo ndizofunikira kwambiri pokonzekera zida zogwira ntchito kwambiri. Komabe, kusagwirizana kosiyanasiyana pakati pa zida za III-V, zida za InGaAs ndi magawo a Si omwe amakula kapena kulumikizidwa pazigawo za Si kumapangitsa kuti pakhale zinthu zosafunikira kapena mawonekedwe abwino, ndipo magwiridwe antchito a chipangizocho akadali ndi chipinda chachikulu chowongolera.
Nthawi yotumiza: Dec-31-2024